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Article

Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field

Authors: Krauze, A., Jekabsons, N., Muiznieks, A., Sabanskis, A., Lacis, U.
Document Type: Article
Pubstate: Published
Journal: Journal of Crystal Growth
Volume: 312   3225-3234
Year: 2010

Abstract

To examine the applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic fields, LES calculations with Smagorinsky–Lilly turbulence model and van Driest damping at the solid walls are carried out. The program package for the calculations was developed on the basis of the open-source code library OpenFOAM. A previously published laboratory model with low temperature melt InGaSn, a 20’’ crucible, and process parameters corresponding to industrial Czochralski silicon systems is considered. Flow regimes with two crystal and crucible rotation rates and with different strengths of the traveling magnetic field ‘‘down’’ are analyzed. The calculated distributions of averaged temperature and standard temperature deviations are compared with measured ones in the laboratory system, and a relatively good agreement between them is shown. The influence of chosen time steps and grid sizes is analyzed by comparing Fourier spectra of temperature time-autocorrelation functions and temperature spatial distributions, and it is shown that the used moderate meshes of few hundred thousand cells can be applied for practical calculations.